278 lines
10 KiB
C
278 lines
10 KiB
C
#include "flash.h"
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#include "stm32f10x_flash.h"
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#include "stm32f10x_rcc.h"
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#include "usart.h"
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#include "sysport.h"
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/********************************************************************************
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* @file flash.c
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* @author 晏诚科技 Mr.Wang
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* @version V1.0.0
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* @date 11-Dec-2018
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* @brief 提供STM32内部flash相关驱动
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******************************************************************************
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*******************************************************************************/
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/****************************************************************************
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* 名 称：void Read_Flash_Byte(uint32_t readAddr, uint8_t *p, uint16_t length)
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* 功 能：从FLASH的readAddr地址处读取readLen字节长度的数据到p地址的缓冲区中
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* 入口参数：
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* @param1 readAddr 读FLASH起始地址
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* @param2 *readBuf 读取数据缓冲区的地址
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* @param3 readLen 需要读出字节数据的长度
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* 出口参数：无
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****************************************************************************/
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void Read_Flash_Byte(uint32_t readAddr, uint8_t *readBuf, uint16_t readLen)
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{
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while(readLen--)
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{
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*(readBuf++) = *((uint8_t*)readAddr++) ;
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}
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}
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/****************************************************************************
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* 名 称：void Read_Flash_Byte(uint32_t readAddr, uint8_t *p, uint16_t length)
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* 功 能：从FLASH的readAddr地质处读取readLen半字超度的数据到p地址的缓冲区中
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* 入口参数：
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* @param1 readAddr 读FLASH起始地址
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* @param2 *readBuf 读取数据缓冲区的地址
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* @param3 readLen 需要读出半字数据的长度
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* 出口参数：无
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****************************************************************************/
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void Read_Flash_HalfWord(u32 readAddr, u16 *readBuf, u16 readLen)
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{
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u16 i ;
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for(i=0;i<readLen;i++)
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{
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readBuf[i] = FLASH_ReadHalfWord(readAddr) ;//读取2个字节.
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readAddr += 2 ;//偏移2个字节.
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}
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}
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/****************************************************************************
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* 名 称：FLASH_Status Write_Flash_NoCheck(u32 WriteAddr, u16 *writeBuf, uint16_t writeLen)
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* 功 能：不检查FLASH有没有被擦除，直接向writeAddr地址写入长度writeLen数据,
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* 入口参数：
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* @param1 writeAddr 写入起始地址
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* @param2 *writeBuf 需要写入FLASH中数据缓冲区的地址
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* @param3 writeLen 半字(16位)数
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* 出口参数：
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* @param1 FLASH_Status 反馈FLASH写入结果
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* @arg : FLASH_BUSY = 1, //忙：闪存正在被操作
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FLASH_ERROR_PG, //编程错误： 试图对内容不是0xFFFF的地址编程
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FLASH_ERROR_WRP, 编程错误
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FLASH_ERROR_TIMEOUT, 编程超时
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* @arg FLASH_COMPLETE: FLASH编程成功
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* 说 明：对FLASH进行写入或者擦除需要使能HSI。
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****************************************************************************/
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FLASH_Status Write_Flash_NoCheck(u32 WriteAddr, u16 *writeBuf, uint16_t writeLen)
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{
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u16 i;
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FLASH_Status writeResult ;
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for(i=0;i<writeLen;i++)
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{
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writeResult = FLASH_ProgramHalfWord(WriteAddr,writeBuf[i]);
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if( writeResult != FLASH_COMPLETE )
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break ;
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WriteAddr+=2;//地址增加2.
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}
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return writeResult ;
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}
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/****************************************************************************
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* 名 称：void Write_Flash_MultiPage(u32 WriteAddr,u16 *writeBuf, uint16_t writeLen)
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* 功 能：向writeAddr地址写入长度writeLen数据
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* 入口参数：
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* @param1 writeAddr 写入起始地址
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* @param2 *writeBuf 需要写入FLASH中数据缓冲区的地址
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* @param3 writeLen 半字(16位)数
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* 出口参数：
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* @param1 RunResult 反馈FLASH写入结果
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* @arg RUNERR: FLASH编程错误
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* @arg RUNOK: FLASH编程成功
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* 说 明：对FLASH进行写入或者擦除需要使能HSI。
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****************************************************************************/
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RunResult Write_Flash_MultiPage(u32 WriteAddr, u16 *writeBuf, uint16_t writeLen)
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{
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u32 secpos; //扇区地址
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u16 secoff; //扇区内偏移地址(16位字计算)
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u16 secremain; //扇区内剩余地址(16位字计算)
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u16 i;
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u32 offaddr; //去掉0X08000000后的地址
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u16 STMFLASH_BUF[FLASH_PAGE_SIZE/2];//最多是2K字节
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if(WriteAddr<FLASH_BASE||(WriteAddr>=(FLASH_BASE+1024*FLASH_SIZE))) return (InParamErr) ;//非法地址
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if( SET!= RCC_GetFlagStatus(RCC_FLAG_HSIRDY))
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{
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SysErr("") ; //HSI被禁用，无法写或擦除FLASH！
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return (RUNERR );
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}
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FLASH_Unlock(); //解锁
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offaddr=WriteAddr-FLASH_BASE; //实际偏移地址.
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secpos=offaddr/FLASH_PAGE_SIZE; //扇区地址 0~127 for STM32F103RBT6
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secoff=(offaddr%FLASH_PAGE_SIZE)/2; //在扇区内的偏移(2个字节为基本单位.)
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secremain=FLASH_PAGE_SIZE/2-secoff; //扇区剩余空间大小
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if(writeLen<=secremain)secremain = writeLen;//不大于该扇区范围
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while(1)
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{
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Read_Flash_HalfWord(secpos*FLASH_PAGE_SIZE+FLASH_BASE,STMFLASH_BUF,FLASH_PAGE_SIZE/2);//读出整个扇区的内容
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for(i=0;i<secremain;i++)//校验数据
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{
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if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//需要擦除
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}
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if(i<secremain)//需要擦除
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{
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FLASH_ErasePage(secpos*FLASH_PAGE_SIZE+FLASH_BASE);//擦除这个扇区
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for(i=0;i<secremain;i++)//复制
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{
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STMFLASH_BUF[i+secoff]=writeBuf[i];
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}
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Write_Flash_NoCheck(secpos*FLASH_PAGE_SIZE+FLASH_BASE,STMFLASH_BUF,FLASH_PAGE_SIZE/2);//写入整个扇区
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}else Write_Flash_NoCheck(WriteAddr,writeBuf,secremain);//写已经擦除了的,直接写入扇区剩余区间.
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if(writeLen==secremain)break;//写入结束了
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else//写入未结束
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{
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secpos++; //扇区地址增1
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secoff=0; //偏移位置为0
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writeBuf+=secremain; //指针偏移
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WriteAddr+=secremain; //写地址偏移
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writeLen-=secremain; //字节(16位)数递减
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if(writeLen>(FLASH_PAGE_SIZE/2))secremain=FLASH_PAGE_SIZE/2;//下一个扇区还是写不完
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else secremain=writeLen;//下一个扇区可以写完了
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}
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};
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FLASH_Lock();//上锁
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return (RUNOK );
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}
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/****************************************************************************
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* 名 称：RunResult Write_Flash_OnePage(uint32_t writePageAddr, uint8_t *writeBuf, uint16_t writeLen)
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* 外部引用：ErrorLogPrintf()
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* 功 能：向页起始地址写入数据，数据长度最多一页长度
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* 入口参数：
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* @param1 writePageAddr 写入的页起始地址
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* @param2 *writeBuf 需要写入FLASH中数据缓冲区的地址
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* @param3 writeLen 需要写入数据的长度（最大值：FLASH_PAGE_SIZE）
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* 出口参数：
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* @param1 RunResult 反馈FLASH写入结果
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* @arg RUNERR: FLASH编程错误
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* @arg RUNOK: FLASH编程成功
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* 说 明：对FLASH进行写入或者擦除需要使能HSI。
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****************************************************************************/
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RunResult Write_Flash_OnePage(uint32_t writePageAddr, uint8_t *writeBuf, uint16_t writeLen)
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{
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uint16_t halfWord, timeOut = 0 ;
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writeLen = writeLen/2+(writeLen%2) ; //将length强制改变为2的倍数
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if( SET!= RCC_GetFlagStatus(RCC_FLAG_HSIRDY))
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{
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SysErr("") ; //HSI被禁用，无法写或擦除FLASH！
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return (RUNERR );
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}
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FLASH_Unlock(); //FLASH解锁
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if( (writePageAddr<FLASH_BASE) || (writePageAddr>=(FLASH_BASE+FLASH_SIZE)) || (writePageAddr%FLASH_PAGE_SIZE != 0) ) //地址必须为页首地址且在FLASH地址范围内 非法地址
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{
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SysErr("") ; //写入FLASH地址非法！
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FLASH_Lock(); //上锁
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return (RUNERR );
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}
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if( writeLen > FLASH_PAGE_SIZE)//写入的数据长度不能超过一页
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{
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SysErr("") ; //写入FLASH长度超限！
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FLASH_Lock(); //上锁
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return (RUNERR );
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}
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FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);//清标志位
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if( FLASH_COMPLETE != FLASH_ErasePage(writePageAddr)) //执行页擦除，并监测擦除状态
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{
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SysErr("") ; //FLASH 页擦除失败！
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}
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for( timeOut=0; (SET == FLASH_GetFlagStatus(FLASH_FLAG_BSY)); timeOut++)
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{
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Wait_For_Nms(10) ;
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if( timeOut>10 )
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{
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SysErr("") ; //写Flash忙等待超时！
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FLASH_Unlock(); //FLASH解锁
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return (RUNERR);
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}
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}
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while(writeLen--)
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{
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FLASH_ClearFlag( FLASH_FLAG_EOP ) ;
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halfWord = *(writeBuf++);
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halfWord |= *(writeBuf++) << 8;
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FLASH_ProgramHalfWord(writePageAddr, halfWord);
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for( timeOut=0; ( SET != FLASH_GetFlagStatus(FLASH_FLAG_EOP) ); timeOut++)
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{
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Wait_For_Nms(10) ;
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if(timeOut>30)
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{
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SysErr("") ; //写Flash出错！
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return (RUNERR);
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}
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}
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writePageAddr += 2;
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}
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FLASH_Lock(); //上锁
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return (RUNOK) ;
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}
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/****************************************************************************
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* 名 称：RunResult Write_Flash(uint32_t writeAddr, uint8_t *writeBuf, uint16_t writeLen)
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* 功 能：向writeAddr地址写入长度writeLen数据
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* 入口参数：
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* @param1 writeAddr 写入起始地址
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* @param2 *writeBuf 需要写入FLASH中数据缓冲区的地址
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* @param3 writeLen 需要写入数据的长度
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* 出口参数：
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* @param1 RunResult 反馈FLASH写入结果
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* @arg RUNERR: FLASH编程错误
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* @arg RUNOK: FLASH编程成功
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* 说 明：对FLASH进行写入或者擦除需要使能HSI。
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****************************************************************************/
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RunResult Write_Flash(uint32_t writeAddr, uint8_t *writeBuf, uint16_t writeLen)
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{
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uint16_t index = 0, timeOut = 0, halfWord = 0 ;
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u32 writeOffset = 0 ;
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writeLen = writeLen/2+(writeLen%2) ; //将logLen强制改变为2的倍数 将logLen字节长度转为半字长度
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if( SET!= RCC_GetFlagStatus(RCC_FLAG_HSIRDY))
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{
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SysErr("") ; //HSI被禁用，无法写或擦除FLASH！
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return (RUNERR );
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}
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FLASH_Unlock(); //FLASH解锁
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FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);//清标志位
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for( timeOut=0; (SET == FLASH_GetFlagStatus(FLASH_FLAG_BSY)); timeOut++)
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{
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Wait_For_Nms(10) ;
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if( timeOut>10 )
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{
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SysErr("") ; //写Flash出错！
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FLASH_Unlock(); //FLASH解锁
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return(RUNERR) ;
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}
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}
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while(writeLen--)
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{
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FLASH_ClearFlag( FLASH_FLAG_EOP ) ;
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halfWord = *(writeBuf+(index++)) ; //取uint16_t类型数据halfWord LSB
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halfWord |= *(writeBuf+(index++)) << 8 ; //取uint16_t类型数据halfWord HSB
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if( ( (writeAddr + writeOffset) % FLASH_PAGE_SIZE ) == 0 ) //写入地址为页首地址则擦除此页
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{
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FLASH_ErasePage(writeAddr+writeOffset) ;
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}
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FLASH_ProgramHalfWord(writeAddr+writeOffset, halfWord) ; //地址偏移量先偏移后写，防止FLASH_ERROR_PG错误
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writeOffset += 2;
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}
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FLASH_Lock(); //上锁
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return(RUNOK) ;
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}
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